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This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2 crystals has been synthesized synthetically at 99...

Van der walls flakes (powdered crystals) of HfS2 have been synthesized through high-pressure reaction at elevated temperatures. Each powdered domain consists of vdW layered HfS2 sheets. These individual HfS2 crystallizes measure somewhere from 100nm to...

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

HfSe2 solution has been created by suspending HfSe2 sheets into isopropanol solution but if needed other solution types can be arranged. HfSe2 crystal precursors are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

Van der walls flakes (powdered crystals) of HfSe2 have been synthesized through high-pressure reaction at elevated temperatures. Each powdered domain consists of vdW layered HfSe2 sheets. These individual HfSe2 crystallizes measure somewhere from 100nm...

Layered tellurene crystals have been synthesized in through hydrothermal synthesis method to provide an easier way to yield thin tellurene sheets. Unlike bulk tellurene materials, hyrothermally synthesized Tellurene are in thin ribbon shapes and are...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much debaded in the field and remains open ended. In2S3 is...

We provide the world's largest size commercially available In2Se3 crystals at the highest quality In2Se3 and affordable prices. Our crystals exceed competing crystals both in size and quality. All the crystals come exfoliation ready. In2Se3 single...

We ofer the world's only commercially available InGaSe2 crystals. InGaSe2 is an infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain...

See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023) We guarantee the world's largest size commercially available InSe crystals at the...

InSeBr (Indium selenide bromide) is a ternary alloy layered semiconductor with an optical band gap of 2.1 eV in the bulk limit. It is one of the newest member of 2D semiconductor family and its' optical, electronic, or magnetic properties remain largely...

InSnSe layered crystals have been synthesized through Bridgman growth technique by alloying Indium and Tin at 50%-50% ratios to create In0.5Sn0.5Se crystals. Our crystals retain 99.9999% purity and perfect layered characteristics. While SnSe and InSe...