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Our Bi2Se3 vdW powders are perfectly layered and are synthesized through high pressure growth technique to produce well layered and high crystallinity powders. The powder is highly crystallized at high temperatures and high pressures over extended period...

This BPs product differs from our other 0.5 gram and 1.0 gram highly crystalline BPs in the following regards: Typically, BPs crystals appear in needle-like layered form. BPs crystal in this product have big sheet like appearance much similar to...

Carboxyl (-COOH) functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form. Carboxyl group reaches up to 3% and the product is...

Cr2AlC is a member of vdW MAX layered material system. Similar to graphite and MoS2, the MAX phases are layered and have the general formula: Mn+1AXn, (MAX) where n = 1 to 3, M is an early transition metal, A is an non-metal elements and X is either...

MXenes are a class of layered materials made from the precursor MAXene by removing the A element. Thus, they are named MXenes and they have a similar structure to graphene and other 2D layers. The precursor, Cr2AlC, is a member of MAX phases, which is a...

CrAgSe2 is a ternary alloy material with exciting thermoelectric properties and unusually low thermal conductivity values. It belongs to R3m [#160] group and has layerd vdW structure.

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side...

Monolayer graphene transferred on SiO2/Si substrates. Full area graphene monolayers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto...