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Bismuth telluride (BiTe) is an intermediate composition material in Bismuth chalcogen material family. It exhibits rather unusual material properties including topological response, low temperature superconductivity, semimatellicity, as well as CDWs...

New dimensions in 2D superconductors research: CuFeTe is unique material with highest Tc temperature in layered materials. Cu atoms are perfectly incorporated into superconducting FeTe matrix. These alloys are not phase separated meaning Fe and Cu atoms...

CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has a layered structure (lamellar) with weak interlayer coupling. In the bulk form, it is a direct band gap semiconductor with 1.6 eV band gap. Experimentally, monolayers are yet...

Copper silicon phoshide CuSi2P3 crystals belong to the group I-IV2-V3 compounds wherein some of the common examples include CuGe2Ps and CuSi2P3. In particular, CuSi2P3 crystals exhibit layered vdW structure with easy exfoliation characteristics. Depiste...

Bulk vdW FeSe crystal is a vdW superconductor with critical tempearture (Tc) of ∼8K. It also exhibits a tetragonal-to-orthorhombic structural transition at Ts~90K. Recently, it has been reported that the FeSe monolayers become superconducting at 65K...

FeSe0.65Te0.35 is a member of the iron-based chalcogenide superconductors, exhibiting a layered crystal structure with weak van der Waals interlayer coupling. This composition is widely regarded as the optimal stoichiometry in the FeSe₁₋ₓTeₓ system,...

FeTe Layered Superconductor Crystals FeTe (Iron Telluride) is a van der Waals (vdW) layered material and serves as the parent compound of the simplest family of iron-based superconductors. The crystal structure features stacked FeTe layers, where a...

Superconductivity in monolayers. Currently, 2D aspect of this material remains largely unexplored. Iron Selenide Telluride (FeTeSe) is a member of layered materials. FeTeSe is considered as the parent material of the simplest family of iron-based...

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material...

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

We provide the world's largest size commercially available GaS crystals at the highest quality GaS and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Large-size hexagonal phase GaS (Gallium sulfide)...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...