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Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D vertical heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D Heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

We transfer any CVD grown monolayers onto your substrates of choice! Our R&D has developed scalable methods to transfer large area h-BN, graphene, MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, SnS2, SnSe2, PtS2, and PtSe2 sheets onto almost any...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.  This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across SiO2/Si substrate. While some regions reach continuity with...

Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates.  This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach...

World's first molecular beam epitaxy (MBE) grown MoSe2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

World's first molecular beam epitaxy (MBE) grown WS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic...

Isolated monolayer thickness WS2 are grown onto c-cut (0001) sapphire substrates.  This particular product contains monolayer thickness WS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach...

World's first molecular beam epitaxy (MBE) grown WSe2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

Isolated monolayer thickness WSe2 are grown onto c-cut (0001) sapphire substrates.  This particular product contains monolayer thickness WSe2 triangular flakes randomly distributed across sapphire substrate. While some regions reach...