ALL PRODUCTS

GeSeTe is a layered phase change 2D anisotropic semiconductors. Much similar to black phosphorus (BPs), GeSe, GeTe, and GaTe, its crystalline structure exhibit highly anisotropic atomic arrangement. It has optical band gap between that of GeSe and GeTe...

Our single crystal GeTe (Germanium telluride) crystals come with guaranteed  anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to...

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to engineering defect density and single domain sizes...

Monolayer graphene transferred on SiO2/Si substrates. Full area graphene monolayers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto...

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm. This product is ideal for battery, lubrication, thermal management, and 2D...

The 3D Graphene Foam is deposited comformably onto Nickel foam foils by chemical vapor deposition (CVD) process. Nickel (Ni) foams were created by acid reaction at high temperatures, followed by 4-step CVD graphene growth process. Overall, few-layers and...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yield optically active material and increasing the...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimizing the defect density to yield optically active...

Monolayer graphene and hBN transferred on SiO2/Si substrates. Full area graphene and hBN layers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and...

High purtiy graphite (HOPG) crystals have been Br2 (bromine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation

High purtiy graphite (HOPG) crystals have been I2 (iodine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation