Graphene - CVD Grown on Cu foils

SKU:
CVD-Graphene-Cu
Condition:
New
  • CVD graphene - 2x2 inches area full coverage highly crystalline graphene sheets - 2Dsemiconductors USA
  • CVD graphene - 2x2 inches area full coverage highly crystalline graphene sheets - 2Dsemiconductors USA
  • Raman CVD graphene - 2x2 inches area full coverage highly crystalline graphene sheets - 2Dsemiconductors USA
  • Graphene - CVD Grown on Cu foils
  • TEM data from CVD graphene - 2x2 inches area full coverage highly crystalline graphene sheets - 2Dsemiconductors USA
$410.00
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Description

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to engineering defect density and single domain sizes. Most CVD graphene chambers produce small (100nm - 1um) graphene sheets. Our process parameters have been optimized to reduce the point defect (vacancy) concentration, improve crystallinity, increase single domain size, and reduce 1D grain boundary defect density. Our CVD graphene products undergo weekly routine quality control tests to ensure the growth system is accurate and parameters are up to date. Our CVD graphene on copper foils measure 2 inches x 2 inches (~5 x5 cm in size). 

If your research needs graphene transferred onto other substrates (SiO2/Si, TEM grids, PET, and other), please contact us for competitive pricing options.

Advantages of CVD graphene on copper foils from 2Dsemiconductors USA

  • Designed, synthesized, and manufactured in USA. All the constituent precursors are all made in U.S.A and produced at our facilities. 
  • CVD graphene products undergo weekly route characterization tests to ensure parameters are up to date and optimized.
  • Defect density has been confirmed at 1E8 - 1E9 cm-2 density
  • Large single domain sizes
  • Less 1D grain boundary defect density
  • 100% compliance with USA customer protection act

Properties of graphene on copper

CVD graphene On 50 um thick Cu foils, full coverage, domain size reaches to 50 um   
Material properties Zero-gap semiconductor, Dirac fermions
Crystal structure Hexagonal phase
Unit cell parameters a=b=0.245 nm, c=0.668 nm, α=β=90°, γ=120°
Growth method Chemical vapor deposition (CVD)
Purity Cu foil (puratonic 6N); CH₄ (6N), graphene (5.8N)

 

Raman spectrum on CVD graphene on copper (2x2 inches)

graphene-on-copper-raman.png

TEM images collected from CVD graphene transferred onto TEM grids

graphene-tem.png

SEM image collected from graphene/copper surfaces

graphene-sem-copper-ii.png

Example literature

1. Nanoimprint-induced strain engineering of two-dimensional materials (2024) https://www.nature.com/articles/s41378-024-00669-6

 

 

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Additional Information

Elements:
C
Element:
Carbon
Formula:
C
Material class:
Carbon
Properties:
Metal
Properties:
Dirac metal
Growth method:
CVD
Doping:
Undoped
Thin-film type:
Monolayer
Substrate:
Copper foil
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