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ZnInTe3 belongs to the family of chalcopyrite semiconductors. Because of this new launch, the physical properties and materials characteristics are awaiting to be explored. Our ZnInTe3 crystals were synthesized through chemical vapor transport technique...

CuIn2Se6 belongs to the family of chalcopyrite semiconductors. This new compound has attracted interest the development of thin-film solar cells and other optoelectronic devices. CuIn2Se6 exhibits properties that make it suitable for photovoltaic...

The first MoWTe2 ternary alloy.  Large single crystal defect free molybdenum tungsten ditelluride (MoxW(1-x)Te2) crystals have been developed in our facilities and they have x=0.3,0.5, and 0.7 stoichiometric ratios. As they are semiconductor grade...

Zirconium tritelluride (ZrTe3) is a semimetal exhibiting charge density wave (CDW) at around 60-70K and superconducting phenomena (Tc~2-5K). It belongs to the group-IV transition metal trichalcogenides. ZrTe3 nanoribbons and microribbons are...

ZrS3 nanosheets are different from our ZrS3 crystals in that ZrS3 nanosheets have been directly grown onto Zr thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos, highly crystalline ZrS3 nanoribbons  directly...

TiS3 nanosheets are different from our TiS3 crystals in that TiS3 nanosheets have been directly grown onto Ti thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos and videos, highly crystalline TiS3 nanoribbons ...

Monolayer flakes have been exfoliated from bulk crystals onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size. Each sample contains at least one single-layer and is easy to find with the given x and y coordinates. Optical images and...

Monolayer WS2 transferred on SiO2/Si substrates. Full area WS2 monolayers were synthesized first using our established CVD growth method on c-cut sapphire and transferred from sapphire onto SiO2/Si using polymer assisted stamping technique. Sample...

Monolayer MoSe2 transferred on SiO2/Si substrates. Full area MoSe2 monolayers were synthesized first using our established CVD growth method on c-cut sapphire and transferred from sapphire onto SiO2/Si using polymer assisted stamping technique...

Monolayer, Few-layer or multilayer hBN transferred on SiO2/Si substrates. Full area hBN layers were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

h-BN (Boron Nitride) monolayer, few-layer or multilayer film is grown onto 50 um thick copper foils only on the top surface of the Cu foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN...

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point...