Description
Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaTe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaTe films come with guaranteed PL, Raman, and semiconducting response.
Properties of GaTe thin films - 2Dsemiconductors USA
| Sample size | Substrate ~1cm² (GaTe area ~0.5cm²) |
| Material properties | 1.65 eV direct semiconductor |
| Crystal structure | Monoclinic (anisotropic) phase |
| Unit cell parameters | a=0.416 nm, b=0.934 nm, c=1.086 nm; α=106.05°, β=90°, γ=102.8° |
| Growth method | Atomic layer deposition (ALD) |
| Purity | Better than 99.9999% confirmed |
GaTe XRD datasets
Photoluminescence spectrum taken on GaTe sheets
Additional Information
Elements: |
Ga,Te |
Element: |
Gallium |
Element: |
Tellurium |
Formula: |
GaTe |
Material class: |
MX |
Material class: |
Quasi-1D |
Properties: |
Semiconductor |
Properties: |
Luminescent |
Band gap range: |
IR |
Growth method: |
ALD |
Doping: |
Undoped |
Thin-film type: |
Multilayer |
Substrate: |
SiO2/Si |
Substrate: |
Sapphire |
Substrate: |
Custom |
