Description
We offer larger than 2.5cm size ultra high purity In2Se3 single crystals with exceptionally low defect density in the alpha phase. These crystals are exfoliation ready, highly uniform, oriented in 002 direction, and ideal for electronic, optical, and ferroelectric research.
Our In2Se3 crystals are produced using a refined Bridgman growth process and represent one of the largest commercially available formats at this quality level. The crystal structure is carefully controlled, resulting in clean layered stacking and strong in plane alignment along the 002 direction as verified by XRD and rocking curve measurements. The bulk material displays a band gap of approximately 1.41 eV and sharp, well defined Raman features that match high purity alpha phase In2Se3.
These crystals are supplied in the alpha phase. They can be converted to the gamma phase in a standard laboratory environment through a simple annealing step. Typical parameters are in the range of 300 to 350 C for approximately 30 to 120 minutes under inert gas. This phase tunability enables studies of phase dependent conduction, switching, and optoelectronic behavior within a single material platform.
Properties of In2Se3 layered crystals
| Material properties | Semiconducting |
| Crystal structure | Hexagonal |
| Unit cell parameters | a=b=0.34 nm, c=18.84 nm; α=β=90°, γ=120° |
| Growth method | Float zone technique or chemical vapor transport |
| Purity | 99.9999% guaranteed |
| Characterization | XRD, XPS, AES, SIM, and HRTEM |
XRD spectrum from In2Se3 layered crystals
Recent work citing our crystal
Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices
Nature Communications, 15, 10481 (2024)
An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing
Nature Electronics, 5, 761–773 (2022)
Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions featured
Journal of Applied Physics 132, 054101 (2022)
Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor
Advanced Functional Materials 2021
https://doi.org/10.1002/adfm.202009999
An optoelectronic synapse based on In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing
Nature Electronics (2022)
Additional Information
Elements: |
In,Se |
Element: |
Indium |
Element: |
Selenium |
Formula: |
In2Se3 |
Material class: |
M2X3 |
Properties: |
Semiconductor |
Band gap range: |
IR |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
