4'' wafer CVD Monolayers or Few-layers (Select material)

4 Inch Full Coverage Monolayer TMDs on Sapphire

We offer high quality 4 inch full area coverage MoS2, MoSe2, WS2, and WSe2 and other monolayers or few-layers on 4 inch c-cut double side polished sapphire wafers. Our films exhibit strong photoluminescence, sharp Raman signatures and outstanding crystalline quality across the wafer.

Growth Method

Our monolayer TMD films are synthesized by plasma enhanced chemical vapor deposition (PECVD) using ultra high purity 6N precursor materials and gases in semiconductor grade processing facilities. The process is optimized to produce highly crystalline films with large grain sizes typically ranging from 1 to 50 microns, excellent wafer scale uniformity, and low defect densities.

Unlike many commercially available films, our materials are carefully engineered for research and device applications requiring high optical and electronic quality. The films demonstrate strong luminescence, clean Raman spectra, excellent surface coverage, and minimal contamination. Every wafer is produced with a focus on reproducibility, material quality, and reliable performance for advanced research, photonics, electronics, sensing, and next generation device development.

Sample Properties

Specifications

Material Identification
Predominantly monolayer MoS2, MoSe2, WS2, or WSe2 and other TMDs films grown on double side polished c-cut sapphire. Small regions of bilayer or multilayer material may be present as is typical for wafer scale CVD growth. Custom few layer growth is available upon request.

Physical Dimensions
4 inches diameter wafer.

Surface Morphology
Continuous two dimensional film with smooth surface morphology suitable for device fabrication, characterization, transfer processes, and research applications.

Coverage
Wafer scale film coverage (or triangles if requested) produced by optimized CVD growth. Local variations in grain boundaries, nucleation density, layer number, and edge regions are characteristic of large area two dimensional materials and may vary from wafer to wafer.

Purity
Synthesized using ultra high purity precursor materials and semiconductor grade processing methods. Material composition is verified through standard characterization techniques.

Uniformity
Designed for high wafer scale uniformity in optical response, thickness distribution, and surface morphology. Minor local variations are inherent to large area CVD grown two dimensional materials.

Crystalline Quality
High crystalline quality as confirmed by Raman spectroscopy and photoluminescence measurements. Material properties are consistent with high quality monolayer transition metal dichalcogenide films reported in the scientific literature.

Substrates
Available on c cut sapphire, SiO2 on Si, quartz, and selected custom substrates (non sapphire surfaces require transfers and are subject to additional fees).

Characterization
Representative Raman, photoluminescence, optical microscopy, and other characterization data are available upon request. Additional characterization services may be arranged.

Defect Density
Low defect density films produced using optimized growth conditions. Actual defect density may vary depending on material system, substrate, wafer location, and measurement technique.

Return Policy
All samples must be returned in their original condition for full return or replacement. Batch to batch variations can occur. The reliability and failure check points are defined by good Raman and PL as per academic standards. Small localized variations in layer number or imperfections (clusters, defects, grain boundaries and others) may be present as is typical for wafer scale CVD growth. 

Technical Support
Technical support is available before and after purchase to assist with handling, characterization, transfer, and device fabrication processes.