MoS2 Natural Crystal

Raman spectroscopy: Raman spectroscopy is data is taken on every piece. Typically, flakes show two prominent Raman peaks at 383cm-1 (E2g- in plane-) and 409cm-1 (A1g out-of-plane) and the FWHM (full-width-at-half-maximum) is less than 5cm-1 showing highly crystalline nature. Photoluminescence (PL): In the bulk form (2H-MoS2), molybdenum disulfide possess indirect band-gap at 1.3eV. Therefore, PL measurements cannot probe the band-gap directly. However, after illuminating with high laser intensity (hot photoluminescence) PL shows peak at 1.3eV.

 

Publications from this product

Summary: Publications from Cornell, Washington, MIT, Berkeley, Stanford, and Princeton teams at top journals like Nature, Nature Materials, Nature Communications, Nano Letters, and Advanced Materials

Zefei Wu, Shuigang Xu, Huanhuan Lu, Armin Khamoshi, Gui-Bin Liu, Tianyi Han, Yingying Wu, Jiangxiazi Lin, Gen Long, Yuheng He, Yuan Cai, Yugui Yao, Fan Zhang, and Ning Wang. "Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides." Nature communications 7, 12955 (2016).

Zefei Wu, Benjamin T. Zhou, Xiangbin Cai, Patrick Cheung, Gui-Bin Liu, Meizhen Huang, Jiangxiazi Lin, Tianyi Han, Liheng An, Yuanwei Wang, Shuigang Xu, Gen Long, Chun Cheng, Kam Tuen Law, Fan Zhang and Ning Wang "Intrinsic valley Hall transport in atomically thin MoS2." Nature communications 10, 611 (2019).

C. Robert, "Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures" Phys. Rev. Materials 2, 011001(R) (2018)

Weigao Xu et al., "Correlated fluorescence blinking in two-dimensional semiconductor heterostructures", Nature 541, 62-67 (2017), link to article:
http://www.nature.com/nature/journal/v541/n7635/full/nature20601.html 

Manish Chhowalla team "Phase-engineered low-resistance contacts for ultrathin MoS2 transistors" Nature Materials DOI: 10.1038/NMAT4080

X. Chen "Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures" Nature Communications 6, Article number: 6088 (2015) doi:10.1038/ncomms7088

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)

H. Wang et.al. "Ultrafast response of monolayer molybdenum disulfide photodetector" Nature Communications 6, Article number: 8831 (2015)

Y. Jin "A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2" Advanced Materials 27, 5534–5540 (2015)

Tongay et. al. "Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons" Scientific Reports 3, Article number: 2657 (2013)

X Li et al. "Determining layer number of twodimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates" Nanotechnology 27 (2016) 145704

Tongay et.al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2; Nano Letters, 2012, 12 (11), pp 5576–5580

Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929