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2 inch full area coverage MoS2, MoSe2, WS2, WSe2 monolayers (few-layers are available on request) on 2 inch size c-cut sapphire substrates. CVD TMDs are all highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness...

h-BN (Boron Nitride) monolayer, few-layer or multilayer film is grown onto 50 um thick copper foils only on the top surface of the Cu foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN...

Monolayer, Few-layer or multilayer hBN transferred on SiO2/Si substrates. Full area hBN layers were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is...

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly...

Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.  This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across SiO2/Si substrate. While some regions reach continuity with...

Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates.  This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach...

This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size and the entire sample surface contains...

Monolayer MoSe2 transferred on SiO2/Si substrates. Full area MoSe2 monolayers were synthesized first using our established CVD growth method on c-cut sapphire and transferred from sapphire onto SiO2/Si using polymer assisted stamping technique...

2H semiconducting phase few-layer MoTe2 (3-6 layers) has been grown on 1cm2 size c-cut sapphire substrates using low-pressure chemical vapor deposition technique (LPCVD). Grown sheets can also be transferred onto other substrates such as quartz, SiO2/Si,...

This product contains full area coverage ReS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReS2 sheet. Synthesized full area coverage monolayer ReS2 is...

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is...