ALL PRODUCTS

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D vertical heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D Heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

We transfer any CVD grown monolayers onto your substrates of choice! Our R&D has developed scalable methods to transfer large area h-BN, graphene, MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, SnS2, SnSe2, PtS2, and PtSe2 sheets onto almost any...

Monolayer flakes have been exfoliated from bulk crystals onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size. Each sample contains at least one single-layer and is easy to find with the given x and y coordinates. Optical images and...

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side...

Monolayer graphene transferred on SiO2/Si substrates. Full area graphene monolayers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

Monolayer graphene and hBN transferred on SiO2/Si substrates. Full area graphene and hBN layers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and...

Monolayer, Few-layer or multilayer hBN transferred on SiO2/Si substrates. Full area hBN layers were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other...