BULK CRYSTALS

Our HfS2 crystals are grown using ultra pure flux vapor technique to produce crystal that are free of halides and vacancy defects. The defect concentration remains lower than 1E9cm-2 for high optical and electronic performance. Our growth technique has...

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

Layered tellurene crystals have been synthesized in through hydrothermal synthesis method to provide an easier way to yield thin tellurene sheets. Unlike bulk tellurene materials, hyrothermally synthesized Tellurene are in thin ribbon shapes and are...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much debaded in the field and remains open ended. In2S3 is...

We provide the world's largest size commercially available In2Se3 crystals at the highest quality In2Se3 and affordable prices. Our crystals exceed competing crystals both in size and quality. All the crystals come exfoliation ready. In2Se3 single...

We ofer the world's only commercially available InGaSe2 crystals. InGaSe2 is an infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain...

See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023) We guarantee the world's largest size commercially available InSe crystals at the...

InSeBr (Indium selenide bromide) is a ternary alloy layered semiconductor with an optical band gap of 2.1 eV in the bulk limit. It is one of the newest member of 2D semiconductor family and its' optical, electronic, or magnetic properties remain largely...

InSnSe layered crystals have been synthesized through Bridgman growth technique by alloying Indium and Tin at 50%-50% ratios to create In0.5Sn0.5Se crystals. Our crystals retain 99.9999% purity and perfect layered characteristics. While SnSe and InSe...

The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak...

We offer larger than 2.5cm size ultra high purity In2Se3 single crystals with exceptionally low defect density in the alpha phase. These crystals are exfoliation ready, highly uniform, oriented in 002 direction, and ideal for electronic, optical, and...

The first and only commercially available Mg(OH)2 crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals. Mg(OH)2 crystals exhibit ~4 eV direct gap and is considered 2D...