Description
CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point defects in CVD diamond. When N-V centers are successfully introduced, it produces coherent photoluminescence which can be easily detected from an individual N-V center, especially those in the negative charge state (NV-) (see our figures). At 2Dsemiconductors we have developed a synthesis technique considering these attractive properties of NV centers in CVD diamond. Our CVD diamond is produced using chemical vapor deposition (CVD) but the process parameters are optimized by using ionized nitrogen in our CVD chamber to increase the NV center rate.
This product contains thin-film CVD grown diamond on undoped Si substrates.
The properties of CVD diamond deposited on Si
| Sample size | 5x5 mm in size on silicon |
| Band gap | 5.7 eV (but emission comes from NV0 and NV-) |
| Emission lines | NV0 ~575 nm and NV- ~ 638 nm |
| Crystal structure | Diamond |
| Synthesis technique | Chemical vapor deposition |
| Characterization methods | PL, SEM,EDS, transmission spectrum |
The sample geometry of CVD diamond on Silicon
Additional Information
Elements: |
C |
Element: |
Carbon |
Formula: |
C |
Material class: |
Carbon |
Properties: |
Insulator |
Properties: |
Quantum emit |
Band gap range: |
UV |
Growth method: |
CVD |
Doping: |
Undoped |
Substrate: |
Silicon |
