Description
Experience the highest quality 2H-MoTe₂ crystals in the world, available in the largest commercially available sizes and offered at affordable prices. Our MoTe₂ crystals are meticulously grown using advanced flux or CVT methods, ensuring superior purity and consistency for research and industrial needs.
2H-MoTe₂ (alpha-phase) is a semiconductor with a unique excitonic properties. In the bulk, it measures ~1.2 eV (indirect) but undergoes to direct gap transition in the monolayer form. Our crystals are perfect for applications in electronics and optoelectronics, and offer unparalleled versatility for cutting-edge developments.
Characteristics of 2H-MoTe2 crystals from 2Dsemiconductors USA
Materials Project [Link]
C2DB [Link]
| Size | larger than 1cm size |
| Material properties | 1.2 eV direct gap semiconductors (monolayer) |
| Crystal structure |
Hexagonal phase |
| Unit cell parameters | a=b=0.350 nm, c=1.341 nm; α=β=90° γ=120° |
| Growth method | [Default] Flux zone (no halide contamination) defect free [Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides |
| Purity | 99.9999% confirmed |
| Characteristics |
|
Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.
Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe
Nature Electronics volume 1, pages512–517 (2018)
Y. Li et. al. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity"
Nature Nanotechnology volume 12, pages 987–992 (2017)
Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers, Phys. Rev. Lett. 117, 187401 (2016)
Tony Heinz Team "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals" Nano Letters 2014, 14, 6231−6236
Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2; Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, and P. H. Tan; Phys. Rev. B 93, 115409 (2016)
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2; Ignacio Gutiérrez Lezama et. al. Nano Letters 2015, 15 (4), pp 2336–2342 DOI: 10.1021/nl5045007
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)
M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929
H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)
S. Vishwanath et. al. "MBE growth of few-layer 2H-MoTe2 on 3D substrates" Journal of Crystal Growth, 482, Pages 61-69 (2018)
Additional Information
Elements: |
Mo,Te |
Element: |
Molybdenum |
Element: |
Tellurium |
Formula: |
MoTe2 |
Material class: |
MX2 |
Material class: |
Dichalcogen |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band gap range: |
IR |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
Doping: |
p-Type |
Doping: |
n-Type |
![TaS2 [2H-phase] crystals : Large size high quality 2D crystals - 2Dsemiconductors USA](https://cdn11.bigcommerce.com/s-i40qayioty/images/stencil/590x590/products/173/979/2H_phase_TaS2_crystals__08973__44251.1704062307.jpg?c=1 "TaS2 [2H-phase] crystals : Large size high quality 2D crystals - 2Dsemiconductors USA")
