Premium Ultra-Flat MoS2 Synthetic Crystals

SKU:
BLK-MoS2-PREM
Condition:
New
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
$910.00
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Description

Limited Edition Ultra-Flat Large-Area MoS2 Crystals

After over five years of dedicated R&D, we are proud to offer our Ultra-Flat Large-Area MoS₂ Crystals—precision-engineered specifically for monolayer exfoliation techniques such as Au-assisted transfer. These synthetic crystals represent the highest quality and largest format MoS2 available globally.

Produced using our proprietary flagship flux growth method, each crystal measures approximately 3 cm and features unmatched surface flatness, making them ideal for advanced electronic, optical, and quantum applications.

Please note: availability is extremely limited due to the specialized synthesis process.

If your research needs 3R-MoS2 crystals, they can be found in the [link]

The properties of Ultra-Flat Large-Area MoS2 Crystals 

Sample size  Approximately 3cm in size
Material properties  Bulk 1.2 eV indirect and Excitonic semiconductor (~1.85 eV)
Crystal structure  2H semiconducting phase
Degree of exfoliation  Easy to exfoliate, ideal for large area exfoliation
Production method  Flux zone  
Other characteristics
  • High single crystal domain size
  • Low defect concentration
  • High carrier mobility
  • Confirmed 300K and cryogenic excitonic response

 

Photoluminescence spectrum from monolayer MoS2 sheets exfoliated from synthetic MoS2 crystals

mos2-photoluminescence.png

Raman spectrum from synthetic MoS2 crystals

mos2-raman.png

XRD data collected from synthetic MoS2 crystals

mos2-xrd.png

Transmission electron microscopy data collected from monolayer MoS2 sheets exfoliated from synthetic MoS2 crystals

mos2-tem.jpg.png

 

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Additional Information

Elements:
Mo,S
Element:
Molybdenum
Element:
Sulfur
Formula:
MoS2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
CVT
Doping:
Undoped
Doping:
p-Type
Doping:
n-Type
Growth method:
Flux
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