Description
SnP2S6 is a van der Waals layered crystal from the metal thiophosphite family, with the chemical formula MP2S6 where M = Sn. It crystallizes in a non-centrosymmetric monoclinic structure and is well-known for its ferroelectric behavior, nonlinear optical activity, and potential in photoresponsive applications. With an indirect band gap of approximately 2.2 eV, SnP2S6 is well-suited for visible light applications in optoelectronics and photonics.
Our SnP2S6 crystals are synthesized using a refined Bridgman growth technique, resulting in ultra-high purity (≥99.9995%) single-phase material. The growth process is carefully optimized to eliminate undesired secondary phases such as SnS, SnS2, and Sn2S3, ensuring 100% pure SnP2S6 crystals.
The properties of vdW SnP2S6 crystals
| Category | Details |
|---|---|
| Sample size | Each order contains ~3-5 mm sized crystals |
| Material properties | Ferroelectric, nonlinear optical, and visible-light semiconductor |
| Crystal structure | Monoclinic phase (non-centrosymmetric) |
| Unit cell parameters | a = 0.697 nm; b = 0.790 nm; c = 0.985 nm; α = 90°; β = 91.3°; γ = 90° |
| Band gap | ~2.2 eV (indirect) |
| Production method | Modified Bridgman (99.9995% or higher purity) |
| Other characteristics | Environmentally stable Medium exfoliation characteristics No SnS, SnS2, or Sn2S3 phases |
Additional Information
Elements: |
Sn,P,S |
Element: |
Tin |
Element: |
Phosphorus |
Element: |
Sulfur |
Formula: |
SnP2S6 |
Material class: |
MPX3 |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
