SOLUTIONS/INKS

If the solution you need is not on the list, please go ahead and order this product. During the check out please identify the material you need along with any specifications you have in mind. Our R&D team will promptly get back to you and start to...

Bi2O2Se is a new high mobility IR semiconductor with layered structure. It has proven to be a promising high thermal velocity ballistic semiconductor, serving as a potential replacement for silicon. Our Bi2O2Se solutions are meticulously...

This product contains black phosphorus (BPs) few-layer flakes solution in a variety of chemicals. Examples include ethanol, isopropanol, DI, and others. The BPs solution has been developed by ultrasonic treatment of BPs high quality crystals synthesized...

This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

This product contains GeSe suspended sheets in isopropanol (or custom) solution. GeSe crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimizing the defect density to yield optically active...

This product contains h-BN mono- and few-layer flakes solution in ethanol. The h-BN solution has been developed by ultrasonic treatment of h-BN high quality crystals synthesized through cubic anvil device high pressure growth technique. Since the...

This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2 crystals has been synthesized synthetically at 99...

HfSe2 solution has been created by suspending HfSe2 sheets into isopropanol solution but if needed other solution types can be arranged. HfSe2 crystal precursors are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form. Starting from single crystalline MnO2, our R&D...

This product contains MoS2 flakes solution in ethanol. The MoS2 solution has been developed by ultrasonic treatment of bulk MoS2 high quality crystals synthesized through vapor transport (CVT) technique. Since the starting material (CVT grown MoS2...

This product contains MoSe2 flakes solution in ethanol. The MoSe2 solution has been developed by ultrasonic treatment of bulk MoSe2 high quality crystals synthesized through vapor transport (CVT) technique. Since the starting material (CVT...