CVD/MBE

2 inch full area coverage MoS2, MoSe2, WS2, WSe2 monolayers (few-layers are available on request) on 2 inch size c-cut sapphire substrates. CVD TMDs are all highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D vertical heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D Heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

We transfer any CVD grown monolayers onto your substrates of choice! Our R&D has developed scalable methods to transfer large area h-BN, graphene, MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, SnS2, SnSe2, PtS2, and PtSe2 sheets onto almost any...

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point...

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point...

Monolayer flakes have been exfoliated from bulk crystals onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size. Each sample contains at least one single-layer and is easy to find with the given x and y coordinates. Optical images and...

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side...

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to engineering defect density and single domain sizes...