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CrSBr is a layered van der Waals  A-type antiferromagnet with a bulk Néel temperature (TN) of 132 K. Our CrSBr crystals have been synthesized using self flux technique using 6N purity precursors over 5 weeks time frame. Resulting crystals are...

CrSeBr is a layered magnetic semiconductor exhibiting highly anisotropic electronic structure. It has been predicted to have a narrow band gap of 0.78 eV. Overall, CrSeBr is a member of CrXBr (X=S, Se) layered crystals and has Pmmn orthorhombic space...

Chromium ditelluride (CrTe2) is a layered vdW magnet material. Recent studies have identified CrTe2 crystals as potential 2D magnetic materials with attractive magnetic, electronic, and catalytic properties. Our CrTe2 crystals have been synthesized at 6N...

Copper telluride (Cu2Te) is a thermoelectric material. Its ZT values reach as high as 1.7. The product contains 1 grams of crystallize Cu2Te. Average grain size vary from 100nm up to few mm in size which makes this product ideal for both thermoelectric...

CuCrP2S6 is a layered material that exhibits ferromagnetic and ferroelectric (overall multiferroic) order in the monolayer limit[ 1]. CuCrP2S6 consists of a chalcogenide (sulfur) framework with the octahedral sites filled by Cu, Cr, and P–P in a...

New dimensions in 2D superconductors research: CuFeTe is unique material with highest Tc temperature in layered materials. Cu atoms are perfectly incorporated into superconducting FeTe matrix. These alloys are not phase separated meaning Fe and Cu atoms...

CuIn2Se6 belongs to the family of chalcopyrite semiconductors. This new compound has attracted interest the development of thin-film solar cells and other optoelectronic devices. CuIn2Se6 exhibits properties that make it suitable for photovoltaic...

Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity...

Worlds largest size crystals: CuInP2S6 is characterized as a ferroelectric semiconductor with two-dimensional properties, exhibiting a Curie temperature of approximately 315 Kelvin. The interlayer bonding is facilitated through van der Waals...

CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has a layered structure (lamellar) with weak interlayer coupling. In the bulk form, it is a direct band gap semiconductor with 1.6 eV band gap. Experimentally, monolayers are yet...

Copper silicon phoshide CuSi2P3 crystals belong to the group I-IV2-V3 compounds wherein some of the common examples include CuGe2Ps and CuSi2P3. In particular, CuSi2P3 crystals exhibit layered vdW structure with easy exfoliation characteristics. Depiste...

The properties of CuTlS crystals Copper thallium sulfide (CuTlS or CTS) is a ternary layered material with band gap ranging from 0.3 - 0.7 eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely...