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This product contains h-BN mono- and few-layer flakes solution in ethanol or any other solution type of your choosing. The h-BN solution has been developed by ultrasonic treatment of h-BN high...

Our HfS2 crystals are grown using ultra pure flux vapor technique to produce crystal that are free of halides and vacancy defects. The defect concentration remains lower than 1E9cm-2 for high optical...

This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2...

Van der walls flakes (powdered crystals) of HfS2 have been synthesized through high-pressure reaction at elevated temperatures. Each powdered domain consists of vdW layered HfS2 sheets. These...

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using...

HfSe2 solution has been created by suspending HfSe2 sheets into isopropanol solution but if needed other solution types can be arranged. HfSe2 crystal precursors are developed at our facilities using...

Van der walls flakes (powdered crystals) of HfSe2 have been synthesized through high-pressure reaction at elevated temperatures. Each powdered domain consists of vdW layered HfSe2 sheets. These...

Hafnium ditelluride (HfTe2) is a topological semimetal vdW crystal. Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and...

World's only flux zone high quality and purity HfTe5 crystals. We offer HfTe5 in flux or CVT growth techniques depending on your choice. HfTe5 is a layered transition metal pentatelluride that...

Highly oriented pyrolytic graphite is a semimetal in the bulk form and is a zero-gap semiconductor with metallic like properties when thinned down. Often times graphite also referred as semi-metallic...

Layered tellurene crystals have been synthesized in through hydrothermal synthesis method to provide an easier way to yield thin tellurene sheets. Unlike bulk tellurene materials, hyrothermally...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much...