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The only magnetic grade FePS3 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created...

FePSe3 is a layered van der Waals (vdW) crystal, and it has been predicted to have an Ising-type antiferromagnetic ordering from bulk to the monolayer limit. FePSe3 is a semiconductor with an optical band gap of 1.3 eV in the bulk limit, while its...

Bulk vdW FeSe crystal is a vdW superconductor with critical tempearture (Tc) of ∼8K. It also exhibits a tetragonal-to-orthorhombic structural transition at Ts~90K. Recently, it has been reported that the FeSe monolayers become superconducting at 65K...

FeSe0.65Te0.35 is a member of the iron-based chalcogenide superconductors, exhibiting a layered crystal structure with weak van der Waals interlayer coupling. This composition is widely regarded as the optimal stoichiometry in the FeSe₁₋ₓTeₓ system,...

FeTe Layered Superconductor Crystals FeTe (Iron Telluride) is a van der Waals (vdW) layered material and serves as the parent compound of the simplest family of iron-based superconductors. The crystal structure features stacked FeTe layers, where a...

Superconductivity in monolayers. Currently, 2D aspect of this material remains largely unexplored. Iron Selenide Telluride (FeTeSe) is a member of layered materials. FeTeSe is considered as the parent material of the simplest family of iron-based...

Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions...

The properties of layered Ga2O3 crystals Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 4.6-4.9eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored...

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material...

Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single...

GaPS4 is a 2D auxetic material with exotic mechanical and optical properties. In 2D form, it exhibits negative Poisson’s ratio both in-plane and out-of-plane directions. Bulk GaPS4 is a direct wide gap semiconductor with the computed band...

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...