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GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2,...

Germanium sulfide (GeS) is an innovative anisotropic semiconductor with a distinctive van der Waals (vdW) structure, detailed in our product description. GeS vdW crystals are synthesized via a...

This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol...

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport...

We provide the world's largest size commercially available GeSe crystals at the highest quality GeSe and affordable prices. World's only commercial high grade Bridgman GeSe crystals measure 0.6-1.2cm...

This product contains GeSe suspended sheets in isopropanol (or custom) solution. GeSe crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol...

GeSeTe is a layered phase change 2D anisotropic semiconductors. Much similar to black phosphorus (BPs), GeSe, GeTe, and GaTe, its crystalline structure exhibit highly anisotropic atomic arrangement...

Our single crystal GeTe (Germanium telluride) crystals come with guaranteed  anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using state-of-art flux...

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to...

Monolayer graphene transferred on SiO2/Si substrates. Full area graphene monolayers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from...

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in...

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm. This product is ideal...