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World's first and only commercially available grey arsenic crystals. β-phase arsenene also referred to as grey arsene. It is a stable form of arsenic in two-dimensions. It crystallizes in rhombohedral symmetry. Each individual 2D...

h-BN (Boron Nitride) monolayer, few-layer or multilayer film is grown onto 50 um thick copper foils only on the top surface of the Cu foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN...

Our h-BN crystals are considered as gold standard in 2D materials field. Each package contains 5-10 crystals measuring 0.5mm to 1.5mm in size. Available growth methods High-pressure h-BN growth: High pressure growth produces lowest defect...

World's largest size h-BN crystals are available! Our h-BN crystals now measure 4-6 mm in size much comparable to other traditional layered crystals. After 3 years of research  and engineering, our team has developed state-of-the-art h-BN...

Monolayer, Few-layer or multilayer hBN transferred on SiO2/Si substrates. Full area hBN layers were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

New improved synthesis growth of hBN powder with perfect layered structure. Each h-BN powder order comes in 2mL size bottles and measures ~1gr in weight. An economical solution to h-BN exfoliation. h-BN flakes powders come in large quantities (see...

This product contains h-BN mono- and few-layer flakes solution in ethanol. The h-BN solution has been developed by ultrasonic treatment of h-BN high quality crystals synthesized through cubic anvil device high pressure growth technique. Since the...

Our HfS2 crystals are grown using ultra pure flux vapor technique to produce crystal that are free of halides and vacancy defects. The defect concentration remains lower than 1E9cm-2 for high optical and electronic performance. Our growth technique has...

This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2 crystals has been synthesized synthetically at 99...

Van der walls flakes (powdered crystals) of HfS2 have been synthesized through high-pressure reaction at elevated temperatures. Each powdered domain consists of vdW layered HfS2 sheets. These individual HfS2 crystallizes measure somewhere from 100nm to...

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

HfSe2 solution has been created by suspending HfSe2 sheets into isopropanol solution but if needed other solution types can be arranged. HfSe2 crystal precursors are developed at our facilities using state-of-art flux zone techniques. Each growth takes...