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ZnIn2S4 is a layered van der Waals material with perfectly layered structure. It has very easy exfoliation characteristics much suited for exfoliation down to large size ultra-thin layers. ZnIn2S4 layers show PL signal at around 700 nm while its response...

ZnInTe3 belongs to the family of chalcopyrite semiconductors. Because of this new launch, the physical properties and materials characteristics are awaiting to be explored. Our ZnInTe3 crystals were synthesized through chemical vapor transport technique...

The only commercially available ZnPS3 vdW crystals with excellent environmental stability and exfoliation characteristics. ZnPS3 is a layered materials belonging to the 2D phosphosulfide family group with the general formula MPX3 where M=Zn and X=S...

The only magnetic grade ZnPSe3 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created...

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized...

Zirconium disulfide (ZrS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. 7-9mm in size, they are designed and optimized in the last three years to achieve perfect industrial semiconductor...

ZrS2 solution consists of monolayer and few-layer thick sheets suspended in isopropanol (IPA) solution or any solution of your choosing. Our process starts from high quality single crystal ZrS2 pieces and ultrasonication process in isopropanol...

Environmentally stable anisotropic transition metal trichalcogenide material ZrS3 is available at 2Dsemiconductors USA. ZrS3 is a layered material like MoS2 and other layered systems, except that it exhibits highly anisotropic crystalline structure...

ZrS3 nanosheets are different from our ZrS3 crystals in that ZrS3 nanosheets have been directly grown onto Zr thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos, highly crystalline ZrS3 nanoribbons  directly...

ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure. ZrSe2 is 0.95 eV indirect gap semiconductor in the bulk form. These ZrSe2 crystals were designed and optimized at our facilities starting 2013 to achieve perfect...

ZrSe2 solution consists of monolayer and few-layer thick sheets suspended in isopropanol (IPA) solution. Our process starts from high quality single crystal ZrSe2 pieces and ultrasonication process in isopropanol (electronic grade chemical at 99.9999%...

Zirconium triselenide (ZrSe3) exhibits coexistence of a charge density waves (CDW) at around 60 K and superconducting response at ~2K. It belongs to the group-IV transition metal trichalcogenides. This is the only commercially available...