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Bi2O2Se is a new high mobility IR semiconductor with layered structure. It has proven to be a promising high thermal velocity ballistic semiconductor, serving as a potential replacement for silicon. Our Bi2O2Se solutions are meticulously...

This product contains black phosphorus (BPs) few-layer flakes solution in a variety of chemicals. Examples include ethanol, isopropanol, DI, and others. The BPs solution has been developed by ultrasonic treatment of BPs high quality crystals synthesized...

Copper telluride (Cu2Te) is a thermoelectric material. Its ZT values reach as high as 1.7. The product contains 1 grams of crystallize Cu2Te. Average grain size vary from 100nm up to few mm in size which makes this product ideal for both thermoelectric...

Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions...

This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

This product contains GeSe suspended sheets in isopropanol (or custom) solution. GeSe crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

GeSeTe is a layered phase change 2D anisotropic semiconductors. Much similar to black phosphorus (BPs), GeSe, GeTe, and GaTe, its crystalline structure exhibit highly anisotropic atomic arrangement. It has optical band gap between that of GeSe and GeTe...

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to engineering defect density and single domain sizes...

The 3D Graphene Foam is deposited comformably onto Nickel foam foils by chemical vapor deposition (CVD) process. Nickel (Ni) foams were created by acid reaction at high temperatures, followed by 4-step CVD graphene growth process. Overall, few-layers and...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimizing the defect density to yield optically active...

High purtiy graphite (HOPG) crystals have been Br2 (bromine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation

High purtiy graphite (HOPG) crystals have been I2 (iodine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation