BULK CRYSTALS

The properties of layered Ga2O3 crystals Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 3-3.5eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely...

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material...

Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single...

GaPS4 is a 2D auxetic material with exotic mechanical and optical properties. In 2D form, it exhibits negative Poisson’s ratio both in-plane and out-of-plane directions. Bulk GaPS4 is a direct wide gap semiconductor with the computed band...

We provide the world's largest size commercially available GaS crystals at the highest quality GaS and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Large size hexagonal phase GaS (Gallium sulfide)...

We provide the world's largest size commercially available GaSe crystals at the highest quality GaSe and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Undoped GaSe crystals growth by Bridgman or...

The only commercially available GaSeTe alloys: Bulk Gallium selenide telluride has a band-gap at 1.89 eV and display strong photoluminescence at the same energy. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and...

The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready...

GaSTe crystals crystallize in hexagonal phase and exhibit 1.5 eV band gap in bulk and physical properties of GaSTe crystals as well as monolayers remain entirely unknown in the literature. Existing GaSTe crystals are first in the literature as well...

We provide the world's largest size commercially available GaTe crystals at the highest quality GaTe and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Our single crystal monoclinic GaTe (Gallium...

We provide the world's largest size commercially available GeAs crystals at the highest quality GeAs and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Our single crystal GeAs (Germanium arsenide) crystals...

GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities...