BULK CRYSTALS

World's first and only commercially available grey arsenic crystals. β-phase arsenene also referred to as grey arsene. It is a stable form of arsenic in two-dimensions. It crystallizes in rhombohedral symmetry. Each individual 2D...

Our h-BN crystals are considered as gold standard in 2D materials field. Each package contains 5-10 crystals measuring 0.5mm to 1.5mm in size. Available growth methods High-pressure h-BN growth: High pressure growth produces lowest defect...

World's largest size h-BN crystals are available! Our h-BN crystals now measure 4-6 mm in size much comparable to other traditional layered crystals. After 3 years of research  and engineering, our team has developed state-of-the-art h-BN...

Our HfS2 crystals are grown using ultra pure flux vapor technique to produce crystal that are free of halides and vacancy defects. The defect concentration remains lower than 1E9cm-2 for high optical and electronic performance. Our growth technique has...

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes...

Hafnium ditelluride (HfTe2) is a topological semimetal vdW crystal. Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our...

HfTe5 is a member of layered transition metal pentatelluride material family. It crystallizes in orthorhombic phase and our crystals exhibit perfectly layered nature. HfTe5 is at the boundary of weak & strong topological insulator (TI) and might...

Highly oriented pyrolytic graphite is a semimetal in the bulk form and is a zero-gap semiconductor with metallic like properties when thinned down. Often times graphite also referred as semi-metallic since its conduction and valance bands overlap each...

Layered tellurene crystals have been synthesized in through hydrothermal synthesis method to provide an easier way to yield thin tellurene sheets. Unlike bulk tellurene materials, hyrothermally synthesized Tellurene are in thin ribbon shapes and are...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much debaded in the field and remains open ended. In2S3 is...

We provide the world's largest size commercially available In2Se3 crystals at the highest quality In2Se3 and affordable prices. Our crystals exceed competing crystals both in size and quality. In2Se3 crystals now available in Bridgman grown (highest...

InGaSe2 is a new infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain limited to date. Our InGaSe2 vdW crystals were synthesized using...