BULK CRYSTALS

We provide the world's largest size commercially available GeAs crystals at the highest quality GeAs and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Our single crystal GeAs (Germanium arsenide) crystals...

GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities...

Germanium sulfide (GeS) is an innovative anisotropic semiconductor with a distinctive van der Waals (vdW) structure, detailed in our product description. GeS vdW crystals are synthesized via a chemical vapor transport method under high-pressure and...

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to...

We provide the world's largest size commercially available GeSe crystals at the highest quality GeSe and affordable prices. World's only commercial high grade Bridgman GeSe crystals measure 0.6-1.2cm in size and exhibits clean cleavable surfaces. CVT...

Our single crystal GeTe (Germanium telluride) crystals come with guaranteed  anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to...

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto...

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm. This product is ideal for battery, lubrication, thermal management, and 2D...

The 3D Graphene Foam is deposited comformably onto Nickel foam foils by chemical vapor deposition (CVD) process. Nickel (Ni) foams were created by acid reaction at high temperatures, followed by 4-step CVD graphene growth process. Overall, few-layers and...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yield optically active material and increasing the...

High purtiy graphite (HOPG) crystals have been Br2 (bromine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation

High purtiy graphite (HOPG) crystals have been I2 (iodine) intercalated to achieve p-type doping. Crystal size measures ~1cm and larger in size and the product is ready for exfoliation