BULK CRYSTALS

Our single crystal HfSe2 (hafnium diselenide) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using...

Hafnium ditelluride (HfTe2) is a topological semimetal vdW crystal. Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and...

World's only flux zone high quality and purity HfTe5 crystals. We offer HfTe5 in flux or CVT growth techniques depending on your choice. HfTe5 is a layered transition metal pentatelluride that...

Highly oriented pyrolytic graphite is a semimetal in the bulk form and is a zero-gap semiconductor with metallic like properties when thinned down. Often times graphite also referred as semi-metallic...

Layered tellurene crystals have been synthesized in through hydrothermal synthesis method to provide an easier way to yield thin tellurene sheets. Unlike bulk tellurene materials, hyrothermally...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much...

We offer 1 cm2 (10x10x1mm) ultra high purity In2Se3 single crystals with exceptionally low defect density in the alpha phase. These crystals are exfoliation ready, highly uniform, oriented in 002...

We provide the world's largest size commercially available In2Se3 crystals at the highest quality In2Se3 and affordable prices. Our crystals exceed competing crystals both in size and quality. All...

We ofer the world's only commercially available InGaSe2 crystals. InGaSe2 is an infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value...

See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023) We guarantee the world's largest size...

InSeBr (Indium selenide bromide) is a ternary alloy layered semiconductor with an optical band gap of 2.1 eV in the bulk limit. It is one of the newest member of 2D semiconductor family and its'...

InSnSe layered crystals have been synthesized through Bridgman growth technique by alloying Indium and Tin at 50%-50% ratios to create In0.5Sn0.5Se crystals. Our crystals retain 99.9999% purity and...